TY  - SER
AU  - Lyapunov,D.V.
AU  - Grigoryev,Denis V.
AU  - Korotaev,Alexander G.
AU  - Voytsekhovskiy,Alexander V.
AU  - Kokhanenko,Andrey P.
AU  - Iznin,I.I.
AU  - Savytskyy,Hrygory V.
AU  - Bonchyk,A.Yu
AU  - Dvoretsky,Sergei A.
AU  - Pishchagin,Anton A.
AU  - Mikhailov,Nikolay N.
TI  - Effect of a boron implantation on the electrical properties of epitaxial HgCdTe with different material composition
KW  - эпитаксиальные пленки
KW  - молекулярно-лучевая эпитаксия
KW  - статьи в журналах
N1  - Библиогр.: 20 назв
N2  - In this work the experimental results of investigations of the dynamics of accumulation and spatial distribution of electrically active radiation defects when irradiating epitaxial films of Hg1-xCdxTe (MCT) with different material composition (x). The films, grown by molecular beam epitaxy (MBE) were irradiated by B ions at room temperature in the radiation dose range 1012 -1015 ions/cm2 and with ion energy 100 keV. The results give the differences in implantation profiles, damage accumulation and electrical properties as a function of the material composition of the films
UR  - http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000622058
ER  -