On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes / I. A. Prudaev, V. V. Kopyev, I. S. Romanov, V. L. Oleynik // Semiconductors. 2017. Vol. 51, № 2. P. 232-238. URL: http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000615998