TY  - SER
AU  - Pociask-Bialy,Malgorzata
AU  - Voytsekhovskiy,Alexander V.
AU  - Nesmelov,Sergey N.
AU  - Dzyadukh,Stanislav M.
AU  - Izhnin,Igor I.
TI  - Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe
KW  - инфракрасное излучение
KW  - электрические характеристики
KW  - поверхностно-барьерные наноструктуры
KW  - градиентные слои
KW  - МДП-структуры
KW  - квантовые ямы
KW  - вольт-частотные характеристики
KW  - статьи в журналах
N1  - Библиогр.: 8 назв
N2  - Impact of illumination on the admittance of the MIS structures based on MBE Hg1-xCdxTe with graded-gap layers and single quantum wells was investigated. It is shown that for HgCdTe-based nanostructures the illumination greatly affects the capacitance and conductance dependencies. The capacitance-voltage characteristics exhibit a low-frequency behavior, which is associated with a decrease in the differential resistance of the space charge region. Especially informative illumination exposure is in the study of deep traps in n-HgCdTe (x=0.21-0.23) without graded-gap layer. Illumination leads to the low-frequency behavior of capacitance-voltage characteristics of MIS structures based on p-HgCdTe with HgTe single quantum well in the active region, and maximums in the voltage dependences do not appear
UR  - http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000577240
ER  -