TY - BOOK AU - Lingnau,Benjamin ED - SpringerLink (Online service) TI - Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices T2 - Springer Theses, Recognizing Outstanding Ph.D. Research, SN - 9783319258058 AV - TA1671-1707 U1 - 621.36 23 PY - 2015/// CY - Cham PB - Springer International Publishing, Imprint: Springer KW - physics KW - Quantum optics KW - Semiconductors KW - Optical materials KW - Electronic materials KW - Physics KW - Optics, Lasers, Photonics, Optical Devices KW - Optical and Electronic Materials KW - Quantum Optics KW - Applications of Nonlinear Dynamics and Chaos Theory N1 - Introduction -- Theory of Quantum-Dot Optical Devices -- Quantum-Dot Laser Dynamics -- Quantum-Dot Optical Amplifiers -- Summary and Outlook N2 - This thesis sheds light on the unique dynamics of optoelectronic devices based on semiconductor quantum-dots. The complex scattering processes involved in filling the optically active quantum-dot states and the presence of charge-carrier nonequilibrium conditions are identified as sources for the distinct dynamical behavior of quantum-dot based devices. Comprehensive theoretical models, which allow for an accurate description of such devices, are presented and applied to recent experimental observations. The low sensitivity of quantum-dot lasers to optical perturbations is directly attributed to their unique charge-carrier dynamics and amplitude-phase-coupling, which is found not to be accurately described by conventional approaches. The potential of quantum-dot semiconductor optical amplifiers for novel applications such as simultaneous multi-state amplification, ultra-wide wavelength conversion, and coherent pulse shaping is investigated. The scattering mechanisms and the unique electronic structure of semiconductor quantum-dots are found to make such devices prime candidates for the implementation of next-generation optoelectronic applications, which could significantly simplify optical telecommunication networks and open up novel high-speed data transmission schemes UR - http://dx.doi.org/10.1007/978-3-319-25805-8 ER -