TY  - SER
AU  - Izhnin,Igor I.
AU  - Voytsekhovskiy,Alexander V.
AU  - Korotaev,Alexander G.
AU  - Mynbaev,Karim D.
AU  - Świątek,Zbigniew
AU  - Morgiel,Jerzy
AU  - Fitsych,Olena I.
AU  - Varavin,Vasilii S.
AU  - Marin,Denis V.
AU  - Yakushev,Maxim V.
AU  - Bonchyk,A.Yu
AU  - Savytskyy,Hrygory V.
TI  - Nano‑scale structural studies of defects in arsenic‑implanted n and p‑type HgCdTe films
KW  - имплантация мышьяка
KW  - просвечивающая электронная микроскопия
KW  - эпитаксиальные пленки
KW  - дефекты
KW  - статьи в журналах
N1  - Библиогр.: с. 401
N2  - Bright–feld and high-resolution transmission electron microscopy were used for nano-scale structural studies of defects induced by implantation of arsenic ions with 190 keV energy and 1014 cm–2 fuence in n and p-type Hg0.78Cd0.22Te flms grown by molecular-beam epitaxy. A similarity in defect pattern formed by arsenic implantation in n and p-type material was observed. The electrical properties of the implanted layers in n and p-type flms also appeared to be similar, confrming the results of microscopic observations
UR  - http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000927183
ER  -