TY  - SER
AU  - Sklyadneva,Irina Yu
AU  - Heid,Rolf
AU  - Echenique,Pedro Miguel
AU  - Chulkov,Evgueni V.
TI  - Electron–phonon interaction in In-induced √7 ×√3 structures on Si(111) from first-principles
KW  - электрон-фононное взаимодействие
KW  - однослойные структуры
KW  - двухслойные структуры
KW  - статьи в журналах
N1  - Библиогр.: 45 назв
N2  - Electron-phonon interaction in the Si(111)-supported rectangular phases of In is investigated within the density-functional theory and linear-response. For both single-layer and double-layer structures, it is found that the phonon-induced scattering of electrons is almost exclusively determined by vibrations of In atoms. It is shown that the strength of electron-phonon coupling at the Fermi level lambda(E-F) increases almost twofold upon adding the second In layer. One of the reasons is that additional low-frequency modes appear in the phonon spectrum, which favors a strong enhancement of lambda(E-F). The agreement of the calculated parameter lambda(E-F) = 0.99 for a double-layer structure as well as the superconducting transition temperature T-c = 3.5 K with experimental estimates indicates that the discovered superconducting phase is probably a double-layer rectangular -In structure on Si(111) with a coverage of 2.4 ML. This conclusion is also supported by good agreement between the calculated electron band structure and ARPES measurements
UR  - http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000894746
ER  -