TY  - GEN
AU  - Moskalenko,Victoriya D.
AU  - Badin,Alexander V.
AU  - Pidotova,Diana A.
TI  - Electrophysical characteristics of Sub-THz diode with Schottky barrier
KW  - Шоттки барьер
KW  - полупроводниковые структуры
KW  - детекторы
KW  - статьи в сборниках
N1  - Библиогр.: 21 назв
N2  - In the paper, the results of research of the electrophysical and frequency characteristics of semiconductor structure with a Schottky barrier based on n- GaAs are presented. Current-voltage characteristic and frequency characteristic at the range 115-257 GHz are given. The possibility of using such semiconductor structures as a detector of Sub-THz radiation is shown
UR  - http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000564029
ER  -