TY  - SER
AU  - Fitsych,Olena I.
AU  - Voytsekhovskiy,Alexander V.
AU  - Korotaev,Alexander G.
AU  - Mynbaev,Karim D.
AU  - Kurbanov,Kurban R.
AU  - Varavin,Vasilii S.
AU  - Dvoretsky,Sergei A.
AU  - Mikhailov,Nikolay N.
AU  - Remesnik,V.G.
AU  - Izhnin,Igor I.
AU  - Yakushev,Maxim V.
AU  - Bonchyk,A.Yu
AU  - Savytskyy,Hrygory V.
AU  - Świątek,Zbigniew
AU  - Morgiel,Jerzy
TI  - Localization and nature of radiation donor defects in the arsenic implanted CdHgTe films grown by MBE
KW  - ионная имплантация
KW  - электрофизические свойства
KW  - пленки CdHgTe
KW  - дефекты
KW  - статьи в журналах
N1  - Библиогр.: 11 назв
N2  - By profiling the electrical parameters of the arsenic implanted CdHgTe films, grown by molecular beam
epitaxy, and comparing the obtained data with the results of studies performed by secondary ion mass
 spectroscopy and transmission electron microscopy, the localization and nature of donor defects formed during
 implantation were determined. It has been shown that such defects are dislocation loops and quasi-point
 defects that trap interstitial mercury atoms released during implantation
UR  - http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000794755
ER  -