TY  - SER
AU  - Syvorotka,I.I.
AU  - Voytsekhovskiy,Alexander V.
AU  - Nesmelov,Sergey N.
AU  - Dzyadukh,Stanislav M.
AU  - Dvoretsky,Sergei A.
AU  - Mikhailov,Nikolay N.
AU  - Izhnin,Igor I.
TI  - Electrical properties of n‑HgCdTe MIS structures with HgTe single quantum wells
KW  - одиночные квантовые ямы
KW  - молекулярно-лучевая эпитаксия
KW  - адмиттанс
KW  - МДП-структуры
KW  - структура металл - диэлектрик - полупроводник
KW  - статьи в журналах
N1  - Библиогр.: с. 2493-2494
N2  - Hg1−xCdxTe grown by molecular beam epitaxy including HgTe single quantum well (SQW) with thickness of 6.5 nm were
investigated. SQW significantly influences the voltage, frequency, and temperature dependencies of the admittance of the
 MIS structure. When the SQW thickness is less than the critical thickness, there are numerous sharp maxima in the capacitance–
 voltage (C–V) curve, and when the thickness of the well is close to the critical thickness, a wide maximum is observed
 in the C–V characteristics associated with overshoot of minority charge carriers from SQW. A distinction is revealed between
 the effect of radiation on capacitive maxima caused by the escape of charge carriers from SQW and the recharging of deep
 levels in the epitaxial film bulk
UR  - http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000794304
ER  -