TY  - SER
AU  - Nesmelov,Sergey N.
AU  - Dzyadukh,Stanislav M.
AU  - Dvoretsky,Sergei A.
AU  - Mikhailov,Nikolay N.
AU  - Sidorov,Georgiy Yu
AU  - Yakushev,Maxim V.
AU  - Voytsekhovskiy,Alexander V.
TI  - Admittance of metal-insulator-semiconductor devices based on HgCdTe nBn structures
KW  - молекулярно-лучевая эпитаксия
KW  - барьерный слой
KW  - МДП-структуры
KW  - адмиттанс
KW  - nBn-структура
KW  - CdHgTe
KW  - статьи в журналах
N1  - Библиогр.: 42 назв
N2  - Metal-insulator-semiconductor (MIS) structures were fabricated by depositing an Al2O3 dielectric on
top of the contact layer of a mid-wave infrared nBn detector based on n-Hg1-xCdxTe grown by
 molecular beam epitaxy on GaAs (013) substrates. It is shown that when creating a backward
 electrode on the absorbing layer, the form of the capacitance–voltage characteristics depends not only
 on the properties of the contact layer, but also on the properties of the barrier and absorbing layers.
 An equivalent circuit of MIS structure based on nBn detector with mesa configuration is proposed. It
 is shown that measurements of the admittance of MIS structures with mesa configuration allow one
 to study the properties of the barrier layer in the nBn structure. The influence of infrared radiation on
 the temperature dependence of the barrier layer resistance is studied
UR  - http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000795379
ER  -