TY  - SER
AU  - Timofeev,Vyacheslav F.
AU  - Mashanov,Vladimir I.
AU  - Azarov,Ivan A.
AU  - Loshkarev,Ivan D.
AU  - Volodin,Vladimir A.
AU  - Gulyaev,Dmitry V.
AU  - Chetyrin,Igor A.
AU  - Korolkov,Ilya V.
AU  - Nikiforov,Alexander I.
TI  - Formation of SnO and SnO2 phases during the annealing of SnO(x) films obtained by molecular beam epitaxy
KW  - оксид олова
KW  - молекулярно-лучевая эпитаксия
KW  - рентгенофазовый анализ
KW  - рамановская спектроскопия
KW  - рентгеновская фотоэлектронная спектроскопия
KW  - показатель преломления
KW  - край поглощения
KW  - фотолюминесценция
KW  - статьи в журналах
N1  - Библиогр.: 49 назв
N2  - SnO and SnO2 films were obtained on the SiO2 surface by the molecular-beam epitaxy method. The initial films
are in the polycrystalline phase. The annealing of SnO(x) films at a temperature of 300 °C resulted in the
 formation of the tetragonal SnO phase. Three vibration modes Eg, A1g, and B1g with the frequencies of SneO
 bond vibrations of 113, 211 and ~360 cm−1, respectively, which correspond to the SnO phase, were first
 observed by the Raman spectroscopy method. The orthorhombic SnO2 films were obtained by increasing the
 annealing temperature to 500 °C. Based on the valence band XPS (X-ray photoelectron spectroscopy) spectrum,
 several features with the binding energy approximately 5 eV, 7.5 eV and 11 eV, which are the same with the
 valence band of SnO2, were identified. The refractive index and absorption coefficient were investigated by the
 spectral ellipsometry technique. The high absorption coefficients correspond to the high Sn content. The film
 dielectric properties were revealed at the temperature higher than 300 °C. The refractive index values lie in the
 range of 1.5–2.6 for the visible spectral region. The pronounced absorption edges at 2.85 eV and 3.6 eV corresponding
 to those of stannous oxide (SnO) and stannic oxide (SnO2) were observed. The photoluminescence
 (PL) from the SnO(x) films was observed at room temperature. The increase of the annealing temperature resulted
 in the increase of PL intensity. Such PL intensity behavior is likely due to the Sn nanoislands
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