TY  - SER
AU  - Voytsekhovskiy,Alexander V.
AU  - Izhnin,Igor I.
AU  - Mynbaev,Karim D.
AU  - Nesmelov,Sergey N.
AU  - Dzyadukh,Stanislav M.
AU  - Varavin,Vasilii S.
AU  - Dvoretsky,Sergei A.
AU  - Mikhailov,Nikolay N.
AU  - Yakushev,Maxim V.
AU  - Korotaev,Alexander G.
AU  - Sidorov,Georgiy Yu
TI  - Admittance studies of modification of HgCdTe surface properties with ion implantation and thermal annealing
KW  - теллурид кадмия-ртути
KW  - молекулярно-лучевая эпитаксия
KW  - ионная имплантация
KW  - термический отжиг
KW  - адмиттанс
KW  - МДП-структуры
KW  - статьи в журналах
N1  - Библиогр.: 26 назв
N2  - Metal–insulator–semiconductor (MIS) structures based on HgCdTe were fabricated after various stages of pn
junction formation using As+ implantation and activation annealing. The energy of As+ ions was 200 keV with
 the fluence of 1014 cm−2. Heteroepitaxial HgCdTe films with near-surface graded-gap layers were grown by
 molecular beam epitaxy (MBE) on silicon substrates. It was shown that the electron concentration in the nearsurface
 semiconductor layer increases after implantation to values of about 1017 cm−3, and after implantation
 and annealing in the near-surface semiconductor layer, a p+ layer appears with a hole concentration of more
 than 1.5 × 1018 cm−3. The generation rate of minority charge carriers in the space charge region after implantation
 is low, which indicates a low defectiveness of the thin near-surface MBE HgCdTe layer. After implantation
 and annealing, the generation rate increases significantly, which may be due to high defectiveness
 near the interface between Al2O3 and MBE HgCdTe. Dopant profiles were constructed in the near-surface
 HgCdTe layers after various technological procedures. It was shown that after implantation in films, the dopant
 concentration increases with distance from the interface to the depth of 0.1 μm
UR  - http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000794654
ER  -