TY  - SER
AU  - Mararov,V.V.
AU  - Utas,T.V.
AU  - Bondarenko,Leonid V.
AU  - Tupchaya,Alexandra Yu
AU  - Matetskiy,Andrey V.
AU  - Denisov,N.V.
AU  - Mihalyuk,Alexey N.
AU  - Eremeev,Sergey V.
AU  - Gruznev,Dimitry V.
AU  - Olyanich,D.A.
AU  - Zotov,Andrey V.
AU  - Saranin,Alexander A.
TI  - C60 capping of metallic 2D Tl-Au compound with preservation of its basic properties at the buried interface
KW  - кремний
KW  - фуллерены
KW  - атомная структура
KW  - электронная структура
KW  - статьи в журналах
N2  - So-called metal-induced silicon reconstructions (i.e., metal films of monolayer or submonolayer thickness epitaxially grown on single-crystal silicon substrates in ultra-high vacuum) represent a specific class of low-dimensional advanced materials with potential prospects for electronic and spintronic applications. However, they are highly vulnerable to air and, thus, require protective capping. Finding a suitable material is a challenging task, since, in general, the metal-induced reconstructions are vulnerable also to overgrowth of solid layers. In the present study, we have found that C60 fullerite film shows up as a proper capping layer for the (Tl, Au)/Si(1 1 1) 7 х 7 compound reconstruction. Due to a perfect non-distractive epitaxial C60 overgrowth, the metallic Tl-Au compound preserves at the deeply buried interface its atomic structure and all basic electronic properties, including spin-splitting of surface-state bands and conductivity of metallic type with a weak antilocalization effect
UR  - http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000791599
ER  -