TY  - SER
AU  - Andrä,Marie
AU  - Barten,Rebecca
AU  - Busca,Paolo
AU  - Brückner,Martin
AU  - Chiriotti Alvarez,S.
AU  - Chsherbakov,Ivan
AU  - Dinapoli,Roberto
AU  - Fajardo,Pablo
AU  - López-Cuenca,Carlos
AU  - Lozinskaya,Anastassiya D.
AU  - Meyer,M.
AU  - Mezza,Davide
AU  - Mozzanica,Aldo
AU  - Redford,Sophie
AU  - Tolbanov,Oleg P.
AU  - Tyazhev,Anton V.
AU  - Zarubin,Andrei N.
AU  - Greiffenberg,Dominic
AU  - Fröjdh,Erik
AU  - Bergamaschi,Anna
TI  - Characterization of GaAs:Cr sensors using the charge-integrating JUNGFRAU readout chip
KW  - GaAs:Cr, рентгеновские сенсоры
KW  - эффективность сбора заряда
KW  - арсенид-галлиевые детекторы
KW  - статьи в журналах
N1  - Библиогр.: 26 назв
N2  - Chromium compensated GaAs sensors have been characterized using the charge-integrating readout chip JUNGFRAU. Due to its low noise performance and 75 × 75 μm2 pixel size, JUNGFRAU enables a precise measurement of the charge (of either polarity) with a high spatial resolution. Several sensor parameters like dark current, noise and spectral performance as well as the charge transport properties of the electrons have been determined. The short lifetime of holes in GaAs:Cr gives rise to an effect where pixels adjacent to a pixel with a photon hit show a strong negative signal when being absorbed close to the readout electrode. This so-called `crater effect' has been simulated and allows an estimation of the hole lifetime in GaAs:Cr
UR  - http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000673870
ER  -