TY  - SER
AU  - Izhnin,Igor I.
AU  - Voytsekhovskiy,Alexander V.
AU  - Korotaev,Alexander G.
AU  - Mynbaev,Karim D.
AU  - Varavin,Vasilii S.
AU  - Dvoretsky,Sergei A.
AU  - Mikhailov,Nikolay N.
AU  - Yakushev,Maxim V.
AU  - Bonchyk,A.Yu
AU  - Fitsych,Olena I.
AU  - Savytskyy,Hrygory V.
AU  - Świątek,Zbigniew
TI  - Defects in arsenic implanted p+-n- and n+-p-structures based on MBE grown CdHgTe films
KW  - масс-спектрометрия
KW  - молекулярно-лучевая эпитаксия
KW  - ионная имплантация
KW  - радиационные дефекты
KW  - активационный отжиг
KW  - статьи в журналах
N1  - Библиогр.: 11 назв
N2  - Complex studies of the defect structure of arsenic-implanted (with the energy of 190 keV) Cd x Hg 1–x Te (x = 0.22) films grown by molecular-beam epitaxy are carried out. The investigations were performed using secondary-ion mass spectroscopy, transmission electron microscopy, optical reflection in the visible region of the spectrum, and electrical measurements. Radiation donor defects were studied in n+–p- and n+–n-structures obtained by implantation and formed on the basis of p-type and n-type materials, respectively, without activation annealing. It is shown that in the layer of the distribution of implanted ions, a layer of large extended defects with low density is formed in the near-surface region followed by a layer of smaller extended defects with larger density. A different character of accumulation of electrically active donor defects in the films with and without a protective graded-gap surface layer has been revealed. It is demonstrated that p+–n- structures are formed on the basis of n-type material upon activation of arsenic in the process of postimplantation thermal annealing with 100% activation of impurity and complete annihilation of radiation donor defects
UR  - http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000634710
ER  -