TY  - SER
AU  - Voytsekhovskiy,Alexander V.
AU  - Korotaev,Alexander G.
AU  - Lyapunov,D.V.
AU  - Dvoretsky,Sergei A.
AU  - Smirnov,P.
AU  - Izhnin,Igor I.
TI  - Electrical characteristics of epitaxial MCT after As+ implantation
KW  - эпитаксиальные пленки
KW  - ионная имплантация
KW  - приповерхностные слои
KW  - статьи в журналах
N1  - Библиогр.: 5 назв
N2  - In this work we studied the characteristics of MBE MCT films after the introduction of different energies As+ with different doses of irradiation. Some of the samples were subjected to post-implantation annealing. Electrical characteristics of the samples were determined from Hall measurements. Voltage-current characteristics of the structures were also measured. Activation As and modification of the characteristics of MCT outside the implanted layer after annealing have been detected. Also we found differences in the p-n junction depths and electrically active defects profiles
UR  - http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000583442
ER  -