TY  - SER
AU  - Romanov,I.S.
AU  - Brudnyi,Valentin N.
AU  - Kopyev,Viktor V.
AU  - Novikov,Vadim A.
AU  - Marmalyuk,A.A.
AU  - Kureshov,V.A.
AU  - Sabitov,D.R.
AU  - Mazalov,A.V.
AU  - Prudaev,Ilya A.
TI  - Effect of the barrier thickness on the optical properties of InGaN/GaN/Al2O3 (0001) LED heterostructures
KW  - галлий
KW  - нитрид индия
KW  - квантовые ямы
KW  - Штарка эффект
KW  - фотолюминесценция
KW  - светодиоды
KW  - статьи в журналах
N1  - Библиогр.: 11 назв
N2  - The results of numerical and experimental study of the electric field strength, photoluminescence wavelength, and internal quantum efficiency of InGaN/GaN (0001) blue LED heterostructures consisting of InGaN multiple quantum wells and GaN barrier layers with the thicknesses of 3, 10, and 15 nm are presented. It is shown that a decrease in the thicknesses of the GaN barrier layers results in a blue shift of the wavelength of LED structures and in an increase of internal quantum efficiency of the structure at high excitation power density
UR  - http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000577753
ER  -