TY  - BOOK
AU  - Rudan,Massimo
ED  - SpringerLink (Online service)
TI  - Physics of Semiconductor Devices
SN  - 9781493911516
AV  - TK7888.4 
U1  - 621.3815 23
PY  - 2015///
CY  - New York, NY
PB  - Springer New York, Imprint: Springer
KW  - engineering
KW  - Semiconductors
KW  - electronics
KW  - Microelectronics
KW  - Electronic circuits
KW  - Engineering
KW  - Circuits and Systems
KW  - Electronics and Microelectronics, Instrumentation
N1  - Part I A Review of Analytical Mechanics and Electromagnetism -- Analytical Mechanics -- Coordinate Transformations and Invariance Properties -- Applications of the Concepts of Analytical Mechanics -- Electromagnetism -- Applications of the Concepts of Electromagnetism -- Part II Introductory Concepts to Statistical and Quantum Mechanics -- Classical Distribution Function and Transport Equation -- From Classical Mechanics to Quantum Mechanics -- Time-Independent Schrodinger Equation -- Time-Dependent Schrodinger Equation -- General Methods of Quantum Mechanics
N2  - This book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices.  Details are worked out carefully and derived from the basic physics, while keeping the internal coherence of the concepts and explaining various levels of approximation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS). The final chapters are devoted to the description of some basic fabrication steps, and to  measuring methods for the semiconductor-device parameters
UR  - http://dx.doi.org/10.1007/978-1-4939-1151-6
ER  -