TY  - BOOK
AU  - Güçlü,Alev Devrim
AU  - Potasz,Pawel
AU  - Korkusinski,Marek
AU  - Hawrylak,Pawel
ED  - SpringerLink (Online service)
TI  - Graphene Quantum Dots
T2  - NanoScience and Technology,
SN  - 9783662446119
AV  - QC176.8.N35 
U1  - 620.5 23
PY  - 2014///
CY  - Berlin, Heidelberg
PB  - Springer Berlin Heidelberg, Imprint: Springer
KW  - physics
KW  - engineering
KW  - Optical materials
KW  - Nanotechnology
KW  - Physics
KW  - Nanoscale Science and Technology
KW  - Optical and Electronic Materials
KW  - Nanotechnology and Microengineering
KW  - Applied and Technical Physics
N1  - Single particle properties of graphene quantum dots -- Electron-electron interaction in gated graphene nanostructures -- Magnetic properties of gated graphene nanostructures -- Optical properties of graphene nanostructures
N2  - This book reflects the current status of theoretical and experimental research of graphene based nanostructures, in particular quantum dots, at a level accessible to young researchers, graduate students, experimentalists and theorists. It presents the current state of research of graphene quantum dots, a single or few monolayer thick islands of graphene.  It introduces the reader to the electronic and optical properties of graphite, intercalated graphite and graphene, including Dirac fermions, Berry's phase associated with sublattices and valley degeneracy, covers single particle properties of graphene quantum dots, electron-electron interaction, magnetic properties and optical properties of gated graphene nanostructures. The electronic, optical and magnetic  properties of the graphene quantum dots as a function of size, shape, type of edge and carrier density are considered. Special attention is paid to the understanding of edges and the emergence of edge states for zigzag edges. Atomistic tight binding and effective mass approaches to single particle calculations are performed. Furthermore, the theoretical and numerical treatment of electron-electron interactions at the mean-field, HF, DFT and configuration-interaction level is described in detail
UR  - http://dx.doi.org/10.1007/978-3-662-44611-9
ER  -