TY  - SER
AU  - Zasukhin,D.I.
AU  - Kokhanenko,Andrey P.
AU  - Kharapudchenko,Olga V.
AU  - Karimbaev,D.D.
ED  - Томский государственный университет
ED  - Томский государственный университет
TI  - The surface roughening of GaN by wet chemical etching
KW  - нитрид галлия
KW  - химическое травление
KW  - шероховатость поверхности
KW  - статьи в журналах
N1  - Библиогр.: 8 назв
N2  - Enhancing the light extraction efficiency is an important problem in the manufacturing of GaN-based LEDs. Many methods have been carried out to increase the external efficiency, including roughening the surface of the LED. In this study, we proposed an approach of wet chemical etching in KOH and K2S2O8 mixed solutions for roughening the surface of GaN. An analysis on change the surface of GaN is described as a function of etching time
UR  - http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000535793
ER  -