TY  - SER
AU  - Timofeev,V.A.
AU  - Nikiforov,Alexander I.
AU  - Mashanov,Vladimir I.
AU  - Tuktamyshev,Artur R.
AU  - Loshkarev,Ivan D.
AU  - Kokhanenko,Andrey P.
ED  - Томский государственный университет
ED  - Томский государственный университет
TI  - Synthesis of epitaxial films based on Ge-Si-Sn materials with Ge/GeSn, Ge/GeSiSn, and GeSn/GeSiSn heterojunctions
KW  - молекулярно-лучевая эпитаксия
KW  - эпитаксиальные пленки
KW  - тонкие пленки
KW  - гетероструктуры
KW  - германий
KW  - статьи в журналах
N1  - Библиогр.: 14 назв
N2  - Results of investigations into the synthesis of heterostructures based on Ge–Si–Sn materials by the method of low-temperature molecular beam epitaxy are presented. The formation of epitaxial films during structure growth has been controlled by the reflection high-energy electron diffraction method. Films with Ge/GeSn, Ge/GeSiSn, and GeSn/GeSiSn heterojunctions are grown with Sn content changing from 2 to 10 % at temperatures in the interval 150–350°С. The stressed state, the composition, and the lattice parameter are studied by the x-ray diffraction method using Omega-scan curves and reciprocal space maps. A tensile strain in the Ge film during Ge/Ge0.9Sn0.1/Si structure growth has reached 0.86%
UR  - http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000535650
ER  -