Admittance of metal-insulator-semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy on GaAs substrates / A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et.al.] // Infrared physics and technology. 2015. Vol. 71. P. 236-241. URL: http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000535375