TY  - SER
AU  - Sulaev,Azat
AU  - Shen,Shun-Qing
AU  - Cho,Soon Khuen
AU  - Zhu,Wei Guang
AU  - Feng,Yuan Ping
AU  - Eremeev,Sergey V.
AU  - Kawazoe,Yoshiyuki
AU  - Shen,Lei
AU  - Wang,Lan
AU  - Zeng,Minggang
ED  - Томский государственный университет
TI  - Electrically tunable in-plane anisotropic magnetoresistance in topological insulator BiSbTeSe2 nanodevices
KW  - топологические изоляторы
KW  - магнитные поля
KW  - магнетосопротивление анизотропное
KW  - статьи в журналах
N2  - We report tunable in-plane anisotropic magnetoresistance (AMR) in nanodevices based on topological insulator
BiSbTeSe2 (BSTS) nanoflakes by electric gating. The AMR can be changed continuously from negative to positive when the
Fermi level is manipulated to cross the Dirac point by an applied gate electric field. We also discuss effects of the gate electric field, current density, and magnetic field on the in-plane AMR with a simple physical model, which is based on the in-plane magnetic field induced shift of the spin-momentum locked topological two surface states that are coupled through side surfaces and bulk weak antilocalization (WAL). The large, tunable and bipolar inplane AMR in BSTS devices provides the possibility of fabricating more sensitive logic and magnetic random access memory AMR devices
UR  - http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000525709
ER  -