TY  - BOOK
AU  - Pearton,Stephen
ED  - SpringerLink (Online service)
TI  - GaN and ZnO-based Materials and Devices
T2  - Springer Series in Materials Science,
SN  - 9783642235214
AV  - TA1750-1750.22 
U1  - 620.11295 23
PY  - 2012///
CY  - Berlin, Heidelberg
PB  - Springer Berlin Heidelberg
KW  - Crystallography
KW  - engineering
KW  - Optical materials
KW  - Surfaces (Physics)
KW  - Materials Science
KW  - Optical and Electronic Materials
KW  - Surfaces and Interfaces, Thin Films
KW  - Optics, Optoelectronics, Plasmonics and Optical Devices
KW  - Nanotechnology and Microengineering
KW  - Nanoscale Science and Technology
N1  - UV LEDs -- Non-Polar GaN Growth -- High-Quality AlGaN Alloys -- Bulk AlN for UV LEDs -- Enhancement of the Light-Extraction Efficiency of GaN-Based Light Emitting Diodes -- GaN-Based Sensors -- III-N Alloys for Solar Power Conversion -- GaN HEMT Technology -- GaN Power Devices -- Nitride Nanostructures -- Radiation-Induced Defects in GaN -- Electron Injection Effects in GaN -- Progress and Prospect of Rare-Earth Nitrides -- Advances in PLD of ZnO and Related Compounds -- ZnO Nanowires and p-Type Doping -- Multifunctional ZnO Structures -- ZnO/MgZnO Quantum Wells -- GZO TFTs
N2  - The AlInGaN and ZnO materials systems have proven to be one of the scientifically and technologically important areas of development over the past 15 years, with applications in UV/visible optoelectronics and in high-power/high-frequency microwave devices. The pace of advances in these areas has been remarkable and the wide band gap community relies on books like the one we are proposing to provide a review and summary of recent progress
UR  - http://dx.doi.org/10.1007/978-3-642-23521-4
ER  -