TY  - SER
AU  - Hasegawa,Mika
AU  - Suto,Ryota
AU  - Sambonsuge,Shota
AU  - Teraoka,Yuden
AU  - Akitaka,Yoshigoe
AU  - Filimonov,Sergey N.
AU  - Hirokazu,Fukidome
AU  - Suemitsu,Maki
AU  - Sugawara,Kenta
TI  - In situ SR-XPS observation of Ni-assisted low-temperature formation of epitaxial graphene on 3C-SiC/Si
KW  - графены
KW  - никель
KW  - силициды
KW  - карбиды
KW  - статьи в журналах
N1  - Библиогр.: 41 назв
N2  - Low-temperature (~1073 K) formation of graphene was performed on Si substrates by using an ultrathin (2 nm) Ni
layer deposited on a 3C-SiC thin film heteroepitaxially grown on a Si substrate. Angle-resolved, synchrotron-radiation X-ray photoemission spectroscopy (SR-XPS) results show that the stacking order is, from the surface to the bulk,Ni carbides(Ni3C/NiCx)/graphene/Ni/Ni silicides (Ni2Si/NiSi)/3C-SiC/Si. In situ SR-XPS during the graphitization annealing clarified that graphene is formed during the cooling stage. We conclude that Ni silicide and Ni carbide formation play an essential role in the formation of graphene
UR  - http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000552751
ER  -