TY  - SER
AU  - Tyuterev,Valeriy G.
AU  - Zhukov,V.P.
AU  - Echenique,Pedro Miguel
AU  - Chulkov,Evgueni V.
TI  - Relaxation of highly excited carriers in wide-gap semiconductors
KW  - полупроводники
KW  - изоляторы
KW  - электрон-фононное взаимодействие
KW  - неравновесные распределения
KW  - статьи в журналах
N1  - Библиогр.: 25 назв
N2  - The electron energy relaxation in semiconductors and insulators after high-level external excitation is analysed by a semi-classical approach based on a kinetic equation of the Boltzmann type. We show that the non-equilibrium distributions of electrons and holes have a customary Fermi-like shape with some effective temperature but also possess a high-energy non-Fermian 'tail'. The latter may extend deep into the conduction and valence bands while the Fermi-like component is localized within a small energy range just above the edge of the band gap. The effective temperature, effective chemical potential, and the shape of the high-energy component are governed by the process of electron–phonon interactions as well as by the rates of carrier generation and inter-band radiative recombination
UR  - http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000553114
ER  -