TY  - SER
AU  - Dirko,Vladimir V.
AU  - Lozovoy,Kirill A.
AU  - Kokhanenko,Andrey P.
AU  - Kukenov,Olzhas I.
AU  - Korotaev,Alexander G.
AU  - Voytsekhovskiy,Alexander V.
TI  - Peculiarities of the 7 × 7 to 5 × 5 superstructure transition during epitaxial growth of germanium on silicon (111) surface
KW  - двумерные материалы
KW  - двумерные структуры
KW  - молекулярно-лучевая эпитаксия
KW  - кремний
KW  - германий
KW  - дифракция быстрых электронов на отражение
KW  - статьи в журналах
N1  - Библиогр.: 66 назв
N2  - This paper presents the results of studying the processes of epitaxial growth of germanium on silicon with crystallographic orientation (111) in a wide temperature range. The temperature dependences of the duration of the transition stage from the 7 × 7 to 5 × 5 superstructure and the values of the critical thickness of the transition from two-dimensional to three-dimensional growth in the range from 250 to 700 ◦C are determined using the reflection high-energy electron diffraction method. It was shown for the first time that the transition time from the 7 × 7 superstructure to 5 × 5 superstructure depends on the temperature of epitaxial growth. The region of low temperatures of synthesis, which has received insufficient attention so far, is also considered
UR  - http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001009722
ER  -