TY  - SER
AU  - Zaitsev,Nickolai L.
AU  - Rusinov,Igor P.
AU  - Menshchikova,Tatiana V.
AU  - Chulkov,Evgueni V.
TI  - Interplay between exchange-split Dirac and Rashba-type surface states at the MnBi2Te4/BiTeI interface
KW  - обменно-расщепленные состояния
KW  - поверхностные состояния
KW  - Рашбы эффект
KW  - антиферромагнитные топологические изоляторы
KW  - статьи в журналах
N1  - Библиогр.: 76 назв
N2  - Based on ab initio calculations, we study the electronic structure of the BiTeI/MnBi2Te4 heterostructure interface composed of the antiferromagnetic topological insulator MnBi2Te4 and the polar semiconductor trilayer BiTeI. We found a significant difference in the electronic properties of the different contacts between the substrate and overlayer. While the case of a Te-Te interface forms a natural expansion of the substrate, when the Dirac cone state locates mostly in the polar overlayer region and undergoes a slight exchange splitting, the Te-I contact is the source of a four-band state contributed by the substrate Dirac cone and Rashba-type state of the polar trilayer. Owing to magnetic proximity, the pair of Kramers degeneracies for this state is lifted, which produces a Hall response in the transport regime. We believe our findings provide new opportunities to construct novel spintronic devices
UR  - http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001009338
ER  -