Impact on the subsurface layers of the single-crystal β-Ga2O3 wafers induced by a mechanical wear P. N. Butenko, L. I. Guzilova, A. V. Chikiryaka [et al.]
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ArticleContent type: Текст Media type: электронный Subject(s): оксид галлия | кривая ω-сканирования | кристалличность | мозаичная структура | постростовая обработкаGenre/Form: статьи в журналах Online resources: Click here to access online
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Materials science in semiconductor processing Vol. 143. P. 106520 (1-6)Abstract: The tribological experiment applied to the gallium oxide wafer led to changes in its structure which can reduce the single crystal perfection. The effect of mechanical wear on the subsurface layers of the β-Ga2O3 single crystal wafers applied to the plane is studied. A decrease in crystallinity within a mosaic structure appearing in the worn samples is revealed with a help of ω-scan analysis, performed by XRD. SEM analysis of the wear track relief of the worn samples showed an emergence of the lamellas framed by domain walls as a result of single crystal splitting.
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The tribological experiment applied to the gallium oxide wafer led to changes in its structure which can reduce the single crystal perfection. The effect of mechanical wear on the subsurface layers of the β-Ga2O3 single crystal wafers applied to the plane is studied. A decrease in crystallinity within a mosaic structure appearing in the worn samples is revealed with a help of ω-scan analysis, performed by XRD. SEM analysis of the wear track relief of the worn samples showed an emergence of the lamellas framed by domain walls as a result of single crystal splitting.
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