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HVPE growth of corundum-structured α-Ga2O3 on sapphire substrates with α-Cr2O3 buffer layer S. I. Stepanov, V. I. Nikolaev, A. V. Almaev [et al.]

Contributor(s): Stepanov, Sergey I | Nikolaev, Vladimir I | Almaev, Aleksei V | Pechnikov, Aleksei I | Scheglov, Mikhail P | Chikiryaka, Andrei V | Kushnarev, Bogdan O | Polyakov, A. YMaterial type: ArticleArticleContent type: Текст Media type: электронный Subject(s): пленки оксида галлия | сапфировые подложки | метод высокочастотного магнетронного распыленияGenre/Form: статьи в журналах Online resources: Click here to access online In: Materials physics and mechanics Vol. 47, № 4. P. 577-581Abstract: Gallium oxide films were grown by HVPE on (0001) sapphire substrates with and without α-Cr2O3 buffer produced by RF magnetron sputtering. Deposition on bare sapphire substrates resulted in a mixture of α-Ga2O3 and ε-Ga2O3 phases with a dislocation density of about 2∙1010 cm-2. The insertion of α-Cr2O3 buffer layers resulted in phase-pure α-Ga2O3 films and a fourfold reduction of the dislocation density to 5∙109 cm-2.
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Gallium oxide films were grown by HVPE on (0001) sapphire substrates with and without α-Cr2O3 buffer produced by RF magnetron sputtering. Deposition on bare sapphire substrates resulted in a mixture of α-Ga2O3 and ε-Ga2O3 phases with a dislocation density of about 2∙1010 cm-2. The insertion of α-Cr2O3 buffer layers resulted in phase-pure α-Ga2O3 films and a fourfold reduction of the dislocation density to 5∙109 cm-2.

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