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Interfacial reactions in the system of MnTe-H2O O. N. Zarubina, G. M. Mokrousov, L. V. Maliy

By: Zarubina, Oksana NContributor(s): Mokrousov, Gennady M | Maliy, Liubov VMaterial type: ArticleArticleSubject(s): межфазные превращения | теллурид марганца | термодинамикаGenre/Form: статьи в журналах Online resources: Click here to access online In: Key engineering materials Vol. 670. P. 113-117Abstract: The thermodynamically possible reactions in MnTe-H2O system at room temperature have been studied. The potential–pH diagram has been plotted assuming quasi-equilibrium on interfacial boundary. The possible mechanism of formation and the composition of a surface in dependence on electrode potential and pH have been discussed and the stable conditions for manganese telluride, i.e. the specific area in the diagram (pH from −2 to 14 and potential from −1.5…− 1.1 to −0.9…−0.6 V) have been found. The obtained results may help optimize the conditions for electodeposition of manganese telluride thin films and for liquid chemical etching for the formation of interfacial boundaries.
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The thermodynamically possible reactions in MnTe-H2O system at room temperature have been studied. The potential–pH diagram has been plotted assuming quasi-equilibrium on interfacial boundary. The possible mechanism of formation and the composition of a surface in dependence on electrode potential and pH have been discussed and the stable conditions for manganese telluride, i.e. the specific area in the diagram (pH from −2 to 14 and potential from −1.5…− 1.1 to −0.9…−0.6 V) have been found. The obtained results may help optimize the conditions for electodeposition of manganese telluride thin films and for liquid chemical etching for the formation of interfacial boundaries.

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