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Study of the switching characteristics of gas S-diodes V. Barmin, P. Priputnev, V. Konev [et al.]
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ArticleContent type: Текст Media type: электронный Subject(s): S-диоды | коммутационные характеристикиGenre/Form: статьи в сборниках Online resources: Click here to access online
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2020 7th International Congress on energy fluxes and radiation effects (EFRE 2020), Tomsk, Russia, September 14 – 26, 2020 : proceedings P. 256-259Abstract: In the study, the switching properties of avalanche GaAs S-diodes are investigated. We studied diode assemblies of various configurations. It is shown that when using two or more diodes connected in series, the edge of the voltage pulse can be sharpened to about 1 ns.
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In the study, the switching properties of avalanche GaAs S-diodes are investigated. We studied diode assemblies of various configurations. It is shown that when using two or more diodes connected in series, the edge of the voltage pulse can be sharpened to about 1 ns.
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