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Planar channelling of relativistic electrons in half-wave silicon crystal and corresponding radiation Y. Takabayashi, V. G. Bagrov, O. V. Bogdanov [et.al.]

Contributor(s): Takabayashi, Y | Bogdanov, O. V | Pivovarov, Yu. L | Tukhfatullin, T. A | Bagrov, Vladislav G, 1938-Material type: ArticleArticleSubject(s): релятивистские электроны | каналирование электронов | компьютерное моделированиеGenre/Form: статьи в журналах Online resources: Click here to access online In: Journal of Physics: Conference Series Vol. 732. P. 012036 (1-8)Abstract: New experimental data on planar channeling of 255 MeV electrons in a 0.74 µm Si Half-Wave Crystal (HWC) obtained at SAGA-LS facility are presented. The computer simulation showed that the angular distribution of electrons after penetration through the HWC revealed the number of unknown before peculiarities is connected with specific electron trajectories in HWC. These specific trajectories lead to specific radiation, the properties of which are analyzed.
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New experimental data on planar channeling of 255 MeV electrons in a 0.74 µm Si Half-Wave Crystal (HWC) obtained at SAGA-LS facility are presented. The computer simulation showed that the angular distribution of electrons after penetration through the HWC revealed the number of unknown before peculiarities is connected with specific electron trajectories in HWC. These specific trajectories lead to specific radiation, the properties of which are analyzed.

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