Features of radiation changes in electrical properties of InAlN/GaN HEMTs A. G. Afonin, V. N. Brudnyi, P. A. Brudnyi, L. E. Velikovskii
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ArticleContent type: Текст Media type: электронный Subject(s): радиационная стойкость | уровень зарядовой нейтральности | транзисторы с высокой подвижностью электроновGenre/Form: статьи в журналах Online resources: Click here to access online
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Russian physics journal Vol. 62, № 9. P. 1656-1662Abstract: The effect of the proton, electron, gamma - rays, and fast neutron irradiation on the parameters of InAlN/GaN
HEMT structures is analyzed. The features of initial electronic properties of the InAlN and AlGaN barrier
layers with a change in their composition, as well as the change in these properties when exposed to highenergy
radiation are considered with taking into account the compositional dependence of the charge
neutrality level energy position in the energy spectrum of these barrier layers.
Библиогр.: 56 назв.
The effect of the proton, electron, gamma - rays, and fast neutron irradiation on the parameters of InAlN/GaN
HEMT structures is analyzed. The features of initial electronic properties of the InAlN and AlGaN barrier
layers with a change in their composition, as well as the change in these properties when exposed to highenergy
radiation are considered with taking into account the compositional dependence of the charge
neutrality level energy position in the energy spectrum of these barrier layers.
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