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IR-to-THz down conversion in nonlinear Gase:Al crystals D. M. Lubenko, D. M. Ezhov, V. F. Losev [et al.]

Contributor(s): Ezhov, Dmitry M | Losev, V. F | Andreev, Yury M, 1946- | Lanskii, Grigory V | Lubenko, D. MMaterial type: ArticleArticleContent type: Текст Media type: электронный Subject(s): оптические свойства | генераторы терагерцового излучения | нелинейные кристаллы | легирование | ИК-диапазонGenre/Form: статьи в журналах Online resources: Click here to access online In: Bulletin of the Russian Academy of Sciences: Physics Vol. 84, № 7. P. 780-782Abstract: The optical properties and hardness of GaSe, GaSe:Al, GaSe:S:Al, and GaSe:Al:O crystals are studied to create effective terahertz radiation generators. Doped crystals differ from pure GaSe in high mechanical and optical properties at a optimum doping level. Oxygen doping allows wide ranging changes in birefringence in the terahertz range.
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The optical properties and hardness of GaSe, GaSe:Al, GaSe:S:Al, and GaSe:Al:O crystals are studied to create effective terahertz radiation generators. Doped crystals differ from pure GaSe in high mechanical and optical properties at a optimum doping level. Oxygen doping allows wide ranging changes in birefringence in the terahertz range.

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