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Orbital angular momentum of channeling radiation from relativistic electrons in thin Si crystal S. V. Abdrashitov, O. V. Bogdanov, P. O. Kazinski, T. A. Tukhfatullin
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ArticleContent type: Текст Media type: электронный Subject(s): релятивистские электроны | закрученные фотоны | орбитальный угловой момент | электромагнитное полеGenre/Form: статьи в журналах Online resources: Click here to access online
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Physics letters A Vol. 382, № 42/43. P. 3141-3145Abstract: We propose to use channeling radiation (CR) from relativistic electrons as a source of high energy twisted photons in the MeV range. We calculate numerically the orbital angular momentum (OAM) of radiation produced by electrons with the energies 155:2500 MeV for the axial and planar channeling in the thin Si crystal. We obtain that the average OAM of CR in this case is approximately 1:6h per photon with the photon energies about 1:2 MeV.
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We propose to use channeling radiation (CR) from relativistic electrons as a source of high energy twisted photons in the MeV range. We calculate numerically the orbital angular momentum (OAM) of radiation produced by electrons with the energies 155:2500 MeV for the axial and planar channeling in the thin Si crystal. We obtain that the average OAM of CR in this case is approximately 1:6h per photon with the photon energies about 1:2 MeV.
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