Scientific Library of Tomsk State University

   E-catalog        

Normal view MARC view

Interface induced quantized spin Hall response in three-dimensional topological insulator/normal insulator heterostructures V. N. Men'shov, I. A. Shvets, V. V. Tugushev, E. V. Chulkov

Contributor(s): Shvets, I. A | Tugushev, V. V | Chulkov, Evgueni V | Menshov, V. NMaterial type: ArticleArticleSubject(s): топологические изоляторы | Холла спиновый эффект | гетероструктурыGenre/Form: статьи в журналах Online resources: Click here to access online In: Journal of magnetism and magnetic materials Vol. 459. P. 231-235Abstract: We report analytic investigation of the electronic properties of heterostructures comprised by films of three-dimensional topological insulator (TI) and normal insulator (NI) revealing strong interface and size effects on their spin transport characteristics. Imposing at the TI/NI interfaces the natural boundary conditions within a continual scheme, we show that the intrinsic spin Hall response of the NI/TI/NI trilayer can be controlled by tuning the interface potential (IP) together with the TI film thickness. We predict a series of interface induced quantum transitions between topological insulating phase and trivial band insulator phase. We calculate the phase diagram of the NI/TI/NI trilayer and establish an appropriate range of the IP strength and the TI film thickness to realize the regime of quantum spin Hall effect. Our results can provide a useful guide in choosing the relevant material parameters to facilitate the detection of quantum spin Hall conductivity in the TI/NI heterostructures.
Tags from this library: No tags from this library for this title. Log in to add tags.
No physical items for this record

Библиогр.: 24 назв.

We report analytic investigation of the electronic properties of heterostructures comprised by films of three-dimensional topological insulator (TI) and normal insulator (NI) revealing strong interface and size effects on their spin transport characteristics. Imposing at the TI/NI interfaces the natural boundary conditions within a continual scheme, we show that the intrinsic spin Hall response of the NI/TI/NI trilayer can be controlled by tuning the interface potential (IP) together with the TI film thickness. We predict a series of interface induced quantum transitions between topological insulating phase and trivial band insulator phase. We calculate the phase diagram of the NI/TI/NI trilayer and establish an appropriate range of the IP strength and the TI film thickness to realize the regime of quantum spin Hall effect. Our results can provide a useful guide in choosing the relevant material parameters to facilitate the detection of quantum spin Hall conductivity in the TI/NI heterostructures.

There are no comments on this title.

to post a comment.
Share