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Properties of gallium oxide films obtained by HF-magnetron sputtering T. Z. Lygdenova, V. M. Kalygina, V. A. Novikov [et al.]
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ArticleSubject(s): фазовый состав | вольт-амперная характеристика | пленки оксида галлия | магнетронное распылениеGenre/Form: статьи в журналах Online resources: Click here to access online
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Russian physics journal Vol. 60, № 11. P. 1911-1916Abstract: The results of an analysis of structure and phase composition of gallium oxide films obtained by HF-magnetron sputtering are presented. It is shown that in the interval 290–350 K, the increase in the film conductivity with increasing temperature is due to the excitation of electrons from a local level Е t located 0.95 eV below the conduction band bottom.
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The results of an analysis of structure and phase composition of gallium oxide films obtained by HF-magnetron sputtering are presented. It is shown that in the interval 290–350 K, the increase in the film conductivity with increasing temperature is due to the excitation of electrons from a local level Е t located 0.95 eV below the conduction band bottom.
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