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The peculiarities of halogens adsorption on A3B5(001) surface A. V. Bakulin, S. E. Kulkova, O. E. Tereshchenko [et.al.]

Contributor(s): Bakulin, Alexander V | Tereshchenko, Oleg E | Shaposhnikov, Anton A | Smolin, Igor Yu | Kulkova, Svetlana EMaterial type: ArticleArticleSubject(s): галогены | адсорбция | поверхности | арсенид галлияGenre/Form: статьи в журналах Online resources: Click here to access online In: IOP Conference Series: Materials Science and Engineering Vol. 77. P. 012002 (1-4)Abstract: Theoretical study of the F, Cl, Br, I adsorption on GaAs(001) surface is presented. The most stable configurations of halogens on Ga-rich ζ-(4×2) reconstruction are determined with increasing of adatoms concentration. The bonds weakening is found more significant for the F and Cl atoms which can induce stationary etching whereas I-induced changes in Ga-As binding energy is not sizable and its adsorption lead to the surface passivation.
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Theoretical study of the F, Cl, Br, I adsorption on GaAs(001) surface is presented. The most stable configurations of halogens on Ga-rich ζ-(4×2) reconstruction are determined with increasing of adatoms concentration. The bonds weakening is found more significant for the F and Cl atoms which can induce stationary etching whereas I-induced changes in Ga-As binding energy is not sizable and its adsorption lead to the surface passivation.

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