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Phonon bottleneck in p-type Ge/Si quantum dots A. I. Yakimov, V. V. Kirienko, V. A. Armbrister [et.al.]

Contributor(s): Yakimov, Andrew I | Armbrister, V. A | Dvurechenskii, Anatolii V | Kirienko, V. VMaterial type: ArticleArticleSubject(s): квантовые точки | германий | кремний | фононыGenre/Form: статьи в журналах Online resources: Click here to access online In: Applied physics letters Vol. 107, № 21. P. 213502-1-213502-4Abstract: We study the effect of quantum dot size on the mid-infrared photo- and dark current, photoconductive gain, and hole capture probability in ten-period p-type Ge/Si quantum dot heterostructures. The dot dimensions are varied by changing the Ge coverage and the growth temperature during molecular beam epitaxy of Ge/Si(001) system in the Stranski-Krastanov growth mode. In all samples, we observed the general tendency: with decreasing the size of the dots, the dark current and hole capture probability are reduced, while the photoconductive gain and photoresponse are enhanced. Suppression of the hole capture probability in small-sized quantum dots is attributed to a quenched electron-phonon scattering due to phonon bottleneck.
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We study the effect of quantum dot size on the mid-infrared photo- and dark current, photoconductive gain, and hole capture probability in ten-period p-type Ge/Si quantum dot heterostructures. The dot dimensions are varied by changing the Ge coverage and the growth temperature during molecular beam epitaxy of Ge/Si(001) system in the Stranski-Krastanov growth mode. In all samples, we observed the general tendency: with decreasing the size of the dots, the dark current and hole capture probability are reduced, while the photoconductive gain and photoresponse are enhanced. Suppression of the hole capture probability in small-sized quantum dots is attributed to a quenched electron-phonon scattering due to phonon bottleneck.

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