Scientific Library of Tomsk State University

   Digital catalogue        

Transient processes in the GaAs-based microwave-pin-diodes G. I. Ayzenshtat, A. Y. Yushchenko, V. G. Bozhkov

By: Ayzenshtat, G. IContributor(s): Yushchenko, A. Yu | Bozhkov, V. GMaterial type: ArticleArticleSubject(s): арсенид галлия | диоды | интегральные схемы монолитныеGenre/Form: статьи в журналах Online resources: Click here to access online In: Russian physics journal Vol. 57, № 12. P. 1627-1633Abstract: The results of studies of transient characteristics of microwave-pin-diodes based on gallium arsenide are presented. It is shown that in these diodes, a transient process occurs in two stages resulting in a complicated pulse shape during the diode switching. The dependences of the effective lifetime on the diode radius and forward current value are measured. It is experimentally established that the effective lifetime in the diodes depends on the radius of the active region.
Tags from this library: No tags from this library for this title. Log in to add tags.
No physical items for this record

Библиогр.: 8 назв.

The results of studies of transient characteristics of microwave-pin-diodes based on gallium arsenide are presented. It is shown that in these diodes, a transient process occurs in two stages resulting in a complicated pulse shape during the diode switching. The dependences of the effective lifetime on the diode radius and forward current value are measured. It is experimentally established that the effective lifetime in the diodes depends on the radius of the active region.

There are no comments on this title.

to post a comment.
Share