Scientific Library of Tomsk State University

   E-catalog        

Normal view MARC view

Atomic Layer Deposition for Semiconductors electronic resource edited by Choel Seong Hwang.

Contributor(s): Hwang, Choel Seong [editor.] | SpringerLink (Online service)Material type: TextTextPublication details: Boston, MA : Springer US : Imprint: Springer, 2014Description: X, 263 p. 170 illus., 81 illus. in color. online resourceContent type: text Media type: computer Carrier type: online resourceISBN: 9781461480549Subject(s): chemistry | Memory management (Computer science) | electronics | Electric engineering | Chemistry | Electrochemistry | Semiconductors | Memory Structures | Energy Technology | Electronics and Microelectronics, InstrumentationDDC classification: 541.37 LOC classification: QD551-578Online resources: Click here to access online
Contents:
Introduction -- Precursors and reaction mechanisms -- ALD simulations -- ALD for mass-production memories (DRAM and Flash) -- ALD for emerging memories -- PcRAM -- FeRAM -- Front end of the line process -- Back end of the line -- ALD machines.
In: Springer eBooksSummary: Atomic Layer Deposition (ALD) was originally designed for depositing uniform passivation layers over a very large area  for display devices in the late 1970s. Only recently, in the 21st century, has the this technique become popular for high integrated semiconductor memory devices. This book discusses ALD for all modern semiconductor devices, the basic chemistry of ALD, and models of ALD processes. The book also details ALD for both mass produced memories and emerging memories. Each chapter of the book provides history, operating principles, and a full explanation of ALD processes for each device.
Tags from this library: No tags from this library for this title. Log in to add tags.
No physical items for this record

Introduction -- Precursors and reaction mechanisms -- ALD simulations -- ALD for mass-production memories (DRAM and Flash) -- ALD for emerging memories -- PcRAM -- FeRAM -- Front end of the line process -- Back end of the line -- ALD machines.

Atomic Layer Deposition (ALD) was originally designed for depositing uniform passivation layers over a very large area  for display devices in the late 1970s. Only recently, in the 21st century, has the this technique become popular for high integrated semiconductor memory devices. This book discusses ALD for all modern semiconductor devices, the basic chemistry of ALD, and models of ALD processes. The book also details ALD for both mass produced memories and emerging memories. Each chapter of the book provides history, operating principles, and a full explanation of ALD processes for each device.

There are no comments on this title.

to post a comment.
Share