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Generating femtosecond pulses in the mid-IR and THz ranges in GaSe1-xTex crystals D. M. Lubenko, V. F. Losev, Yu. M. Andreev [et.al.]

Contributor(s): Lubenko, D. M | Andreev, Yury M, 1946- | Lanskii, Grigory V | Losev, V. F | Svetlichnyi, Valerii A | Томский государственный университет Физический факультет Кафедра оптики и спектроскопииMaterial type: ArticleArticleSubject(s): селенид галлия | фемтосекундные импульсы | фемтосекундное излучениеGenre/Form: статьи в журналах Online resources: Click here to access online In: Bulletin of the Russian Academy of Sciences: Physics Vol. 79, № 2. P. 238-241Abstract: GaSe crystals with 0, 0.07, 0.38, 0.67, 2.07, 3, and 5 wt % Te are grown. GaSe:Te (≤2.07 wt %) crystals are suitable for nonlinear optics applications. The optimum doping level is 0.07 wt %. This minimizes optical losses and increases the damage threshold by ≥20%, hardness by 33%, and the efficiency of femtosecond Ti:Sa laser frequency conversion into the 8.8–24 μm and 0.2–3 THz ranges by ≥50%.
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GaSe crystals with 0, 0.07, 0.38, 0.67, 2.07, 3, and 5 wt % Te are grown. GaSe:Te (≤2.07 wt %) crystals are suitable for nonlinear optics applications. The optimum doping level is 0.07 wt %. This minimizes optical losses and increases the damage threshold by ≥20%, hardness by 33%, and the efficiency of femtosecond Ti:Sa laser frequency conversion into the 8.8–24 μm and 0.2–3 THz ranges by ≥50%.

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