Band structure engineering in topological insulator based heterostructures T. V. Menshchikova, M. M. Otrokov, S. S. Tsirkin [et.al.]
Material type:
ArticleSubject(s): топологические изоляторы | гетероструктуры | электронная структура | электрические поляGenre/Form: статьи в журналах Online resources: Click here to access online
In:
Nano letters Vol. 13. P. 6064-6069Abstract: ABSTRACT: The ability to engineer an electronic band
structure of topological insulators would allow the production
of topological materials with tailor-made properties. Using ab
initio calculations, we show a promising way to control the
conducting surface state in topological insulator based
heterostructures representing an insulator ultrathin films on
the topological insulator substrates. Because of a specific
relation between work functions and band gaps of the
topological insulator substrate and the insulator ultrathin film
overlayer, a sizable shift of the Dirac point occurs resulting in a significant increase in the number of the topological surface state
charge carriers as compared to that of the substrate itself. Such an effect can also be realized by applying the external electric field
that allows a gradual tuning of the topological surface state. A simultaneous use of both approaches makes it possible to obtain a
topological insulator based heterostructure with a highly tunable topological surface state.
Библиогр.: 39 назв.
ABSTRACT: The ability to engineer an electronic band
structure of topological insulators would allow the production
of topological materials with tailor-made properties. Using ab
initio calculations, we show a promising way to control the
conducting surface state in topological insulator based
heterostructures representing an insulator ultrathin films on
the topological insulator substrates. Because of a specific
relation between work functions and band gaps of the
topological insulator substrate and the insulator ultrathin film
overlayer, a sizable shift of the Dirac point occurs resulting in a significant increase in the number of the topological surface state
charge carriers as compared to that of the substrate itself. Such an effect can also be realized by applying the external electric field
that allows a gradual tuning of the topological surface state. A simultaneous use of both approaches makes it possible to obtain a
topological insulator based heterostructure with a highly tunable topological surface state.
There are no comments on this title.