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Relaxation of highly excited carriers in wide-gap semiconductors V. G. Tyuterev, V. P. Zhukov, P. M. Echenique, E. V. Chulkov

Contributor(s): Tyuterev, Valeriy G | Zhukov, V. P | Echenique, Pedro Miguel | Chulkov, Evgueni VMaterial type: ArticleArticleSubject(s): полупроводники | изоляторы | электрон-фононное взаимодействие | неравновесные распределенияGenre/Form: статьи в журналах Online resources: Click here to access online In: Journal of physics: Condensed matter Vol. 27, № 2. P. 025801 (1-8)Abstract: The electron energy relaxation in semiconductors and insulators after high-level external excitation is analysed by a semi-classical approach based on a kinetic equation of the Boltzmann type. We show that the non-equilibrium distributions of electrons and holes have a customary Fermi-like shape with some effective temperature but also possess a high-energy non-Fermian 'tail'. The latter may extend deep into the conduction and valence bands while the Fermi-like component is localized within a small energy range just above the edge of the band gap. The effective temperature, effective chemical potential, and the shape of the high-energy component are governed by the process of electron–phonon interactions as well as by the rates of carrier generation and inter-band radiative recombination.
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The electron energy relaxation in semiconductors and insulators after high-level external excitation is analysed by a semi-classical approach based on a kinetic equation of the Boltzmann type. We show that the non-equilibrium distributions of electrons and holes have a customary Fermi-like shape with some effective temperature but also possess a high-energy non-Fermian 'tail'. The latter may extend deep into the conduction and valence bands while the Fermi-like component is localized within a small energy range just above the edge of the band gap. The effective temperature, effective chemical potential, and the shape of the high-energy component are governed by the process of electron–phonon interactions as well as by the rates of carrier generation and inter-band radiative recombination.

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