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Electrical conductive and photoelectrical properties of heterostructures based on gallium and chromium oxides with corundum structure D. A. Almaev, A. V. Almaev, V. V. Kopyev [et al.]

Contributor(s): Almaev, Dmitry A | Almaev, Aleksei V | Kopyev, Viktor V | Nikolaev, Vladimir I | Pechnikov, Aleksei I | Stepanov, Sergey I | Boyko, M. E | Butenko, Pavel N | Scheglov, Mikhail PMaterial type: ArticleArticleContent type: Текст Media type: электронный Subject(s): оксид галлия | оксид хрома | корунд | гетероструктурыGenre/Form: статьи в журналах Online resources: Click here to access online In: Technical physics letters Vol. 48, № 11. P. 61-64Abstract: α-Ga2O3/α-Cr2O3 heterostructures with a corundum structure were obtained by chloride vapor phase epitaxy and magnetron sputtering. The structural, electrical conductive and photoelectrical properties of the obtained samples were studied. It was established that the α-Ga2O3/α-Cr2O3 heterostructures exhibits weak rectifying properties and in comparison with α-Ga2O3 films has a higher response speed when exposed to ultraviolet radiation
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α-Ga2O3/α-Cr2O3 heterostructures with a corundum structure were obtained by chloride vapor phase epitaxy and magnetron sputtering. The structural, electrical conductive and photoelectrical properties of the obtained samples were studied. It was established that the α-Ga2O3/α-Cr2O3 heterostructures exhibits weak rectifying properties and in comparison with α-Ga2O3 films has a higher response speed when exposed to ultraviolet radiation

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